![]() Fundamental differences were identified, which can lead to a more focused further development of defect elimination in 3C-SiC. For the first time, the overgrowth of protrusions has been categorized for different types and qualities of substrates. In the context of this work, we provide a phenomenological description of the overgrowth principle as well as limitations for the defect elimination, depending on the structure of the protrusions. Overgrowth according to (ii) is possible only for off-axis substrates and represents a real elimination mechanism, leading to an improvement of the material quality. However, at high defect densities or for the on-axis substrate, they represent a relevant elimination mechanism. Mechanisms (i) and (iii) are not real overgrowth mechanisms because they are directly linked to the inducing defects themselves or other undesired disturbances of the substrate. ![]() ![]() Three different overgrowth mechanisms were found to contribute to defect elimination: (i) mutual overgrowth by defects of the same type, (ii) real overgrowth by step-flow growth, and (iii) overgrowth by quasi-step-flow growth at surface irregularities. Test results are typically available to your doctor within one week.We investigated the overgrowth of protrusion defects during sublimation growth of cubic silicon carbide (3C-SiC) using free-standing on-axis and off-axis substrates. If you need to cancel or reschedule your procedure, please call 86 at least 48 hours in advance. Please follow these instructions carefully.
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